With the help of high performance components, these power modules can cope with the needs of highest power applications. From all-in-one power integrated modules with rectifier, brake chopper and to inverter part, Infineon products cover a range from only hundreds of watts to several megawatts. Larger arrangements that form basic building blocks of power electronic equipment are considered Power Modules usually combining IGBT and diode dies in various topologies. Benefits of Discretes IGBT are high current density and low power dissipation resulting in higher efficiency and smaller heat sink to allow lower overall system cost. This devices are suitable for applications such as General Purpose Inverters, Solar Inverters, UPS, Induction Heating, Major Home Appliances, Welding and SMPS. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.We offer a broad portfolio of IGBT chips assembled in discrete plastic packages, so called Discretes IGBTs, which are available as Single IGBTs and co-packed with freewheeling Diode. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter.

An IGBT is a fusion between a BJT and MOSFET. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. K120T60 is an Insulated Gate Bipolar Transistor.

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